OPTOELECTRONIC DEVICE

专利摘要:
The invention relates to an optoelectronic device (10) comprising: a support (12); at least a first electrically conductive layer (18) covering the support; display pixel circuits (Pix) comprising first and second opposite faces (22, 23), attached to the first electrically conductive layer, each display pixel circuit comprising an electronic circuit (20) comprising the first face and a third face (24) opposite to the first face, the first face being fixed to the first electrically conducting layer, and at least one optoelectronic circuit (26) fixed to the third face and comprising at least one light emitting diode, at least one one of the electrodes of the light emitting diode being connected to the electronic circuit by the third face; at least a second electrically conductive layer (34) covering the display pixel circuits and electrically connected to the electronic circuits of the display pixel circuits on the second face side.
公开号:FR3069378A1
申请号:FR1756984
申请日:2017-07-21
公开日:2019-01-25
发明作者:Xavier Hugon；Philippe Gilet；Ivan-Christophe Robin；Zine Bouhamri；Frederic Mercier；Matthieu Charbonnier
申请人:Aledia；
IPC主号:

专利说明:

OPTOELECTRONIC DEVICE
Field
The present application relates to an optoelectronic device, in particular a display screen or an image projection device, comprising light-emitting diodes, subsequently called LEDs, based on semiconductor materials, and their manufacturing methods.
Presentation of the prior art
One pixel of an image corresponds to the unitary element of the image displayed by the optoelectronic device. When the optoelectronic device is a screen for displaying color images, it generally comprises for the display of each pixel of the image at least three components, also called display subpixels, which each emit light radiation substantially in only one color (for example, red, green and blue). The superposition of the radiations emitted by these three display sub-pixels provides the observer with the colored sensation corresponding to the pixel of the displayed image. In this case, the display pixel of the optoelectronic device is the assembly formed by the three display sub-pixels used for displaying a pixel of an image.
Each display sub-pixel may comprise a light source, in particular a light-emitting diode for example at
B16175 - Smart reporting based on semiconductor materials. A known method for manufacturing an optoelectronic device, in particular a display screen or an image projection device, comprising light-emitting diodes, called the pick and place method, consists in manufacturing the light-emitting diodes in the form of separate components, and placing each light emitting diode at a desired position on a support which may include conductive tracks for the electrical connection of the light emitting diodes.
One drawback of such a method is that it generally requires the light-emitting diodes to be placed precisely on the support. This requires the implementation of alignment methods that are all the more complex as the dimensions of the light-emitting diodes are reduced.
Another drawback of such a method is that an increase in the resolution of the optoelectronic device results in an increase in the number of transfers of light-emitting diodes to the support and therefore an increase in the duration of the manufacture of the optoelectronic device which may not not be compatible with manufacturing on an industrial scale.
For the realization of a large LED screen composed of assembled unit LED components, the LEDs must be assembled with control circuits which control a certain number of LEDs. The different units are linked together by wires. This assembly reduces the amount of data that can be transmitted and it is difficult to display a video stream.
For micrometric size LED screens, called pLEDs below, for TV, tablet and smart phone formats which are being developed by several manufacturers, an active matrix is required to display a flow video with high resolution. Currently active matrices for screens are produced in thin film transistors, or TFT (English acronym for Thin Film Transistor). TFTs use deposits of
B16175 - Smart reporting of amorphous or polycrystalline silicon on large glass surfaces and requires the use of complex microelectronic processes on large surfaces.
The use of so-called intelligent pixels integrating with the LEDs or pLEDs of the control electronics could make it possible to produce active matrices without TFT. These active matrices could be produced on very large surfaces because they rely on the electronics embedded under the pixel. On the other hand, this electronics would benefit from the performance of silicon-based technology. Large outdoor or indoor screens incorporating this technology could be controlled by an active matrix, thereby increasing their brightness and, in addition, could display larger data flows.
Another advantage of the approach is the production of large screens with very large number of pixels. We are not constrained by pre-defined active TFT matrices or by electronics to be assembled.
summary
Thus, an object of an embodiment is to at least partially overcome the drawbacks of optoelectronic devices comprising light-emitting diodes described above.
Another object of an embodiment is to reduce the number of transfers of components to the support of the optoelectronic device during the manufacture of the optoelectronic device.
Another object of an embodiment is to reduce the precision constraints when placing components on the support of the optoelectronic device.
Another object of an embodiment is that the optoelectronic devices can be manufactured on an industrial scale and at low cost.
Another object is that the optoelectronic device comprises an active matrix.
B16175 - Smart reporting
Another object is that the optoelectronic device allows the display of a video stream.
Thus, one embodiment provides an optoelectronic device comprising:
a support ;
at least a first electrically conductive layer covering the support;
display pixel circuits comprising first and second opposite faces, fixed to the first electrically conductive layer, each display pixel circuit comprising an electronic circuit comprising the first face and a third face opposite to the first face, the first face being fixed to the first electrically conductive layer, and at least one optoelectronic circuit fixed to the third face and comprising at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third face;
at least one second electrically conductive layer covering the display pixel circuits and electrically connected to the electronic circuits of the display pixel circuits on the side of the second face.
According to one embodiment, the device further comprises an electrically insulating layer covering the first electrically conductive layer between the display pixel circuits.
According to one embodiment, the electrically insulating layer covers the lateral flanks of the display pixel circuits.
According to one embodiment, each display pixel circuit further comprises an electrically insulating portion covering the electronic circuit and the optoelectronic circuit and at least one electrically conductive element passing through the electrically insulating portion and electrically connected to the second conductive layer electrically and to the optoelectronic or electronic circuit.
B16175 - Smart reporting
According to one embodiment, for each display pixel circuit, the optoelectronic circuit comprises a through connection electrically isolated from the rest of the optoelectronic circuit and electrically connected to the electronic circuit and to the conductive element.
According to one embodiment, the device comprises at least two first electrically separated conductive layers and covering the support, sets of said display pixel circuits fixed to each first electrically conductive layer and at least two second electrically conductive layers each covering the one of the sets of said display pixel circuits and each being electrically connected to the electronic circuits of one of the sets of said display pixel circuits.
According to one embodiment, the device comprises a module for supplying, between the first electrically conductive layer and the second electrically conductive layer, a voltage modulated by control signals, the electronic circuit of each display pixel circuit being adapted to demodulate said voltage to extract the control signals.
According to one embodiment, each electronic circuit comprises a memory in which an identifier is stored, the identifiers stored in the electronic circuits being different, and each electronic circuit comprises circuits adapted to extract from the modulated voltage information representative of one identifiers.
According to one embodiment, the device comprises at least one waveguide, possibly integrated into the second electrically conductive layer, coupled to the optoelectronic circuits of the display pixel circuits and suitable for guiding electromagnetic radiation.
According to one embodiment, the device further comprising a source of said electromagnetic radiation coupled with the waveguide and, for each display pixel circuit, the optoelectronic circuit comprises a sensor of said radiation
B16175 - Smart electromagnetic reporting suitable for supplying a measurement signal to the electronic circuit.
According to one embodiment, the source is adapted to modulate the electromagnetic radiation by control signals, and, for each display pixel circuit, the electronic circuit is adapted to demodulate the measurement signal to extract the control signals.
According to one embodiment, the device comprises at least two waveguides, possibly integrated into the second conductive layer electrically coupled to the optoelectronic circuits of sets distinct from said display pixel circuits.
According to one embodiment, the device further comprises optical coupling means between the waveguide and at least some of the display pixel circuits.
One embodiment provides a method of manufacturing an optoelectronic device comprising the following steps:
a) fabricating display pixel circuits comprising first and second opposite faces and each comprising an electronic circuit comprising first faces and a third face opposite the first face, and at least one optoelectronic circuit fixed to the third face, and comprising at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third face;
b) fabricating a support covered with at least a first electrically conductive layer;
c) fixing the first face of the electronic circuit of each display pixel circuit to the first electrically conductive layer;
d) forming at least a second electrically conductive layer covering the display pixel circuits and electrically connected to the optoelectronic circuits of the display pixel circuits on the side of the second face.
B16175 - Smart reporting
According to one embodiment, between the steps c) and d), the method comprises the step of forming an electrically insulating layer covering the first electrically conductive layer between the display pixel circuits.
According to one embodiment, step a) comprises the formation, for each display pixel circuit, of an electrically insulating portion covering the electronic circuit and the optoelectronic circuit and at least of an electrically conductive element passing through the portion electrically insulating and electrically connected to the second electrically conductive layer and to the optoelectronic circuit or to the electronic circuit.
Brief description of the drawings
These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the attached figures, among which:
Figures 1 and 2 are respectively a side sectional view and a top view, partial and schematic, of an embodiment of an optoelectronic device;
Figure 3 is an equivalent electrical diagram of a display pixel of the optoelectronic device shown in Figures 1 and 2;
FIGS. 4A and 4B are side, partial and schematic sectional views, of other embodiments of an optoelectronic device;
Figure 5 is an equivalent electrical diagram of a display pixel of the optoelectronic device shown in Figure 4B;
Figure 6 is a partial and schematic top view of the optoelectronic device shown in Figures 1 and 2 illustrating an advantage of the manufacturing process of the optoelectronic device;
Figure 7 is a diagram illustrating the control of the optoelectronic device shown in Figures 1 or 4;
B16175 - Smart reporting Figures 8A and 8B are top views, partial and schematic, of other embodiments of an optoelectronic device;
Figure 9 is a side, partial and schematic sectional view of another embodiment of an optoelectronic device;
Figures 10 to 12 are top views, partial and schematic, of other embodiments of optoelectronic devices;
FIGS. 13 and 14 are timing diagrams respectively of the potentials applied to the conductive strips connected to a display pixel to be controlled and of the voltage seen between the supply terminals of the display pixel to be controlled;
FIG. 15 represents an equivalent electrical diagram of an embodiment of a display pixel;
FIG. 16 represents an equivalent electrical diagram of part of the display pixel of FIG. 15;
FIG. 17 represents a timing diagram of signals during the operation of the display pixel of FIG. 15;
Figures 18 to 21 show equivalent circuit diagrams of parts of the display pixel of Figure 15;
FIG. 22 represents a timing diagram of signals during the operation of the display pixel, the control module of which is according to the embodiment shown in FIG. 18;
FIG. 23 represents an equivalent electrical diagram of another embodiment of a display pixel;
Figures 24 and 25 show equivalent electrical diagrams of parts of the display pixel of Figure 23;
FIG. 26 represents a timing diagram of signals during the operation of the display pixel of FIG. 23;
FIGS. 27A to 271 are side, partial and schematic sectional views of structures obtained at successive stages of an embodiment of a manufacturing process
B16175 - Smart reporting of the optoelectronic device shown in Figures 1 and 2; and FIGS. 28A to 28D are side, partial and schematic sectional views of structures obtained in successive stages of an embodiment of a method of manufacturing the optoelectronic device shown in FIG. 4B. detailed description
For the sake of clarity, the same elements have been designated by the same references in the different figures and, moreover, as is usual in the representation of electronic circuits, the various figures are not drawn to scale. In addition, only the elements useful for understanding this description have been shown and are described. In particular, the structure of a light emitting diode is well known to those skilled in the art and is not described in detail.
In the following description, when reference is made to relative position qualifiers, such as the terms above, below, upper, lower, etc., reference is made to the orientation of the figures or to an optoelectronic device in a normal position of use. Unless otherwise indicated, the terms substantially, approximately, approximately and of the order of mean to the nearest 10%, preferably to the nearest 5%. In addition, the active area of a light emitting diode is the region of the light emitting diode from which most of the electromagnetic radiation supplied by the light emitting diode is emitted. In addition, a binary signal is a signal which alternates between a first constant state, for example a low state, noted 0, and a second constant state, for example a high state, noted 1. The high and low states of different binary signals of the same electronic circuit can be different. In practice, binary signals can correspond to voltages or currents which may not be perfectly constant in the high or low state.
B16175 - Smart reporting
FIGS. 1 and 2 represent an embodiment of an optoelectronic device 10, for example corresponding to a display screen or to an image projection device, comprising display pixels, two display pixels being represented in Figure 1 and three display pixels being shown in Figure 2. Figure 1 is a section of Figure 2 along line II-II and Figure 2 is a section of Figure 1 along line II.
The device 10 comprises from bottom to top in FIG. 1:
a support 12 comprising opposite lower and upper faces 14, 16, preferably parallel;
a first electrode layer 18 comprising an electrically conductive layer 18 covering the upper face 16;
display pixels Pix, also called display pixel circuits thereafter, resting on the electrode layer 18 and in contact with the electrode layer 18, and comprising a lower face 22 and an opposite upper face 23 on the underside, each Pix display pixel comprising:
an electronic circuit 20, hereinafter called the control circuit, comprising the lower face 22 and an upper face 24 opposite the lower face 22, the faces 22, 24 preferably being parallel, the lower face 22 being fixed to the layer d electrode 18, optionally by means of a bonding material;
optoelectronic circuits 26 fixed to the upper face 24 of the electronic circuit 20, three optoelectronic circuits 26 per display pixel Pix being shown in FIG. 2, each optoelectronic circuit 26 comprising at least one light-emitting diode, not shown;
an electrically insulating portion 28 covering the optoelectronic circuits 26 and covering the upper face 24 of the control circuit 20 between the optoelectronic circuits 26;
B16175 - Smart reporting of the electrically conductive elements 30 passing through the insulating portion 28, coming into contact with the optoelectronic circuits 2 6 and the upper face 24 of the control circuit 2 0;
an electrically insulating layer 32 covering the electrode layer 18 between the display pixels Pix and covering the lateral flanks of the electronic circuits 20 and optionally insulating portions 28; and a second electrode layer 34 comprising an electrically conductive layer at least partially transparent to the radiation emitted by the light-emitting diodes, the conductive layer 34 covering the insulating layer 32 and the insulating portions 28 and being in contact with the conductive elements 30 of each pixel Pix display.
An encapsulation layer, not shown, can cover the conductive layer 34.
When the underside 22 of the electronic circuit 20 is fixed to the electrode layer 18 by a bonding material, the bonding material is preferably electrically conductive. Alternatively, an electrically non-conductive bonding material can be used, for example disposed on the periphery of the underside 22 of the electronic circuit
20.
According to one embodiment, each optoelectronic circuit 26 comprises at least one light-emitting diode. In the case where the optoelectronic circuit 26 comprises two or more of two light-emitting diodes, all the light-emitting diodes of the optoelectronic circuit 26 preferably emit light radiation substantially at the same wavelength.
Each light emitting diode may correspond to a so-called two-dimensional light emitting diode comprising a stack of substantially planar semiconductor layers including the active zone. Each light emitting diode can comprise at least one three-dimensional light emitting diode with
B16175 - Smart reporting radial structure comprising a semiconductor shell covering a three-dimensional semiconductor element, in particular a microfil, a nanowire, a cone, a truncated cone, a pyramid or a truncated pyramid, the shell being formed from a stack of non-conductive layers planes including the active area. Examples of such light-emitting diodes are described in patent applications US2014 / 0077151 and US2016 / 0218240. Each light emitting diode can comprise at least one three-dimensional light emitting diode with an axial structure in which the shell is located in the axial extension of the semiconductor element.
For each display pixel Pix, the optoelectronic circuit 26 can be fixed to the control circuit 20 by a link of the Flip-Chip type. The fusible conductive elements 36, for example solder balls or indium balls, which connect the optoelectronic circuit 26 to the control circuit 20 provide the mechanical connection between the optoelectronic circuit 26 and the control circuit 20 and ensure, in in addition, the electrical connection of the light-emitting diode or of the light-emitting diodes of the optoelectronic circuit 26 to the control circuit 20. According to another embodiment, each optoelectronic circuit 26 can be fixed to the control circuit 20 by direct bonding.
According to one embodiment, each display pixel Pix comprises at least two types of optoelectronic circuits 26. The optoelectronic circuit 26 of the first type is adapted to emit a first radiation at a first wavelength and the optoelectronic circuit 26 of the second type is suitable for emitting a second radiation at a second wavelength. According to one embodiment, each display pixel Pix comprises at least three types of optoelectronic circuits 26, the optoelectronic circuit 26 of the third type being adapted to emit a third radiation at a third wavelength. The first, second and third wavelengths can be different.
B16175 - Smart reporting
According to one embodiment, the first wavelength corresponds to blue light and is in the range of 430 nm to 490 nm. According to one embodiment, the second wavelength corresponds to green light and is in the range of 510 nm to 570 nm. According to one embodiment, the third wavelength corresponds to red light and is in the range of 600 nm to 720 nm.
According to one embodiment, each display pixel Pix comprises an optoelectronic circuit 26 of a fourth type, the optoelectronic circuit 26 of the fourth type being adapted to emit a fourth radiation at a fourth wavelength. The first, second, third and fourth wavelengths can be different. According to one embodiment, the fourth wavelength corresponds to yellow light and is in the range of 570 nm to 600 nm. According to another embodiment, the fourth radiation corresponds to radiation in the near infrared, in particular at a wavelength between 700 nm and 980 nm, to ultraviolet radiation, or to white light.
Each optoelectronic circuit 26 can comprise a semiconductor substrate on which the light-emitting diode or light-emitting diodes rests. The semiconductor substrate is, for example, a substrate of silicon, germanium, silicon carbide, a III-V compound, such as GaN or GaAs, a ZnO substrate, or a sapphire substrate. According to another embodiment, each optoelectronic circuit 26 may not include a substrate. A mirror layer can then be placed on the underside of the optoelectronic circuit 26 in contact with the light-emitting diode or light-emitting diodes. According to one embodiment, the mirror layer is adapted to reflect at least in part the radiation emitted by the light-emitting diodes.
Each control circuit 20 can comprise electronic components, not shown, in particular transistors, used for controlling the diodes.
B16175 - Electroluminescent smart reporting. Each control circuit 26 can comprise a semiconductor substrate in which and / or on which the electronic components are formed. The lower face 22 of the control circuit 20 can then correspond to the rear face of the substrate opposite to the front face of the substrate on the side of which the electronic components are formed. The semiconductor substrate is, for example, a silicon substrate, in particular monocrystalline silicon.
Preferably, the optoelectronic circuits 26 comprise only light-emitting diodes and connection elements of these light-emitting diodes and the control circuits 20 comprise all of the electronic components necessary for controlling the light-emitting diodes of the optoelectronic circuits 26. As a variant, optoelectronic circuits 26 may also include other electronic components in addition to light emitting diodes.
The optoelectronic device 10 can comprise from 10 to 10 ^ pixels of display Pix. Each pixel of Pix display can occupy in top view an area between 1 pm ^ and 100 mm2. The thickness of each display pixel Pix can be between 100 μm and 10 mm. The thickness of each electronic circuit 20 can be between 1 μm and 2000 μm. The thickness of each optoelectronic circuit 26 can be between 0.2 μm and 1000 μm.
The support 12 can be made of an electrically insulating material, comprising for example a polymer, in particular an epoxy resin, and in particular the FR4 material used for the manufacture of printed circuits, or a metallic material, for example aluminum. The thickness of the support 12 can be between 100 μm and 10 mm.
The conductive layer 18 preferably corresponds to a metallic layer, for example aluminum, silver, copper or zinc. The thickness of the conductive layer 18 can be between 0.5 μm and 1000 μm.
B16175 - Smart reporting
Each insulating portion 28 can be made of a dielectric material, for example of silicon oxide (SiOg), of silicon nitride (Si _x Ny, where x is approximately equal to 3 and y is approximately equal to 4, for example S13N4) , in silicon oxynitride (SiO _x Ny where x can be approximately equal to 1/2 and y can be approximately equal to 1, for example SigONg), aluminum oxide (AlgOg), or hafnium oxide ( HfOg). The maximum thickness of each insulating portion 28 can be between 0.5 μm and 1000 μm.
Each conductive element 30 can be made of a material chosen from the group comprising copper, titanium, nickel, gold, tin, aluminum and the alloys of at least two of these compounds.
The insulating layer 32 can be made of a dielectric material, for example silicon oxide (SiOg), silicon nitride (Si _x Ny, where x is approximately equal to 3 and y is approximately equal to 4, for example S13N4) , in silicon oxynitride (SiO _x Ny where x can be approximately equal to 1/2 and y can be approximately equal to 1, for example SigONg), aluminum oxide (AlgOg), or hafnium oxide ( HfOg). The thickness of the insulating layer 32 can be between 0.02 μm and 1000 μm. Preferably, the insulating layer 32 is opaque. The insulating layer 32 may correspond to a white resin, to a black resin or to a transparent resin loaded, in particular with particles of titanium oxide.
The conductive layer 34 is adapted to allow the electromagnetic radiation emitted by the light-emitting diodes to pass. The material forming the conductive layer 34 can be a transparent and conductive material such as indium tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped with aluminum or gallium, or graphene. The minimum thickness of the electrically conductive layer 34 on the display pixels Pix can be between 0.1 μm and 1000 μm.
The encapsulation layer can be made of an at least partially transparent insulating material. The encapsulation layer can be made of an inorganic material at
B16175 - Smart reporting less partially transparent. By way of example, the inorganic material is chosen from the group comprising silicon oxides of the SiO _x type where x is a real number between 1 and 2 or SiOyN _z where y and z are real numbers between 0 and 1 and aluminum oxides, for example AI2O3. The encapsulation layer can be made of an organic material at least partially transparent. As an example, the encapsulation layer is a silicone polymer, an epoxy polymer, an acrylic polymer or a polycarbonate.
According to one embodiment, in operation, a voltage Vg is applied between the electrode layers 34 and 18 for supplying the display pixels Pix, in particular light-emitting diodes of the optoelectronic circuits 26 of the display pixels Pix.
FIG. 3 represents an equivalent electrical diagram of the display pixel Pix shown in FIGS. 1 and 2. A first electrode, for example the cathode, of each light-emitting diode LED is connected to the control circuit 20 of the display pixel Pix while that the second electrode of each light-emitting diode LED, for example the anode, is connected to the electrode layer 34. The control circuit 20 is connected between the electrode layers 18 and 34 and receives the voltage Vg. The circuit 20 controls the light-emitting diodes of the optoelectronic circuits 26.
FIG. 4A is a view similar to FIG. 1 of another embodiment of an optoelectronic device 37 comprising all the elements of the optoelectronic device 10 with the difference that the insulating layer 32 is not present and that the electrode layer 34 rests on a substrate 38. A method of manufacturing the optoelectronic device 37 comprises forming the electrode layer 18 on the support 12, assembling the display pixels Pix on the electrode layer 18 , the formation of the electrode layer 34 on the substrate 38 and then the hybridization of the display pixels Pix on the electrode layer 34. The support 12 and the substrate 38 can be
B16175 - Flexible smart reporting, which allows the manufacturing of a flexible optoelectronic device 37.
FIG. 4B is a view similar to FIG. 1 of another embodiment of an optoelectronic device 40 comprising all the elements of the optoelectronic device 10 with the difference that, for each display pixel Pix, the optoelectronic circuits 26 are integrated into a single optoelectronic circuit 42 covering the upper face 24 of the control circuit 20 of the display pixel Pix and fixed to the upper face 24 of the control circuit 20, for example by the fusible conductive elements 36. Each optoelectronic circuit 42 comprises opposite lower and upper faces 44, 46, preferably parallel, the lower face 44 of the optoelectronic circuit 42 being fixed to the upper face 24 of the control circuit 20. The optoelectronic circuit 42 comprises at least one vertical through connection 48 or TSV (English acronym for Through Silicon Via) formed for example in a portion 47 of the optoelectro circuit nique 42, which connects the upper face 46 to the lower face 44 and which is electrically isolated from the rest of the optoelectronic circuit 42. The portion 47 can be made of an electrically insulating material or a semiconductor material. In the latter case, the TSV 48 is surrounded by an electrically insulating layer. The upper face 46 of each optoelectronic circuit 42 is covered by the insulating portion 28. The insulating portion 28 is crossed by an electrically conductive element 30 which is in contact with the TSV 48. According to another embodiment, the supply of the circuit 20 is performed by another means than the TSV 48.
According to one embodiment, each TSV 48 can comprise a core made of an electrically conductive material, for example polycrystalline silicon, tungsten, copper, aluminum or a refractory metallic material, surrounded by an electrically insulating layer.
Each optoelectronic circuit 42 comprises at least a first light-emitting diode adapted to emit the first
B16175 - Smart reporting radiation at the first wavelength and a second light-emitting diode adapted to emit the second radiation at the second wavelength. Each optoelectronic circuit 42 can also comprise at least a third light-emitting diode adapted to emit the third radiation at the third wavelength.
FIG. 5 represents an equivalent electrical diagram of the display pixel Pix represented in FIG. 3 in the case where each optoelectronic circuit 42 comprises three light-emitting diodes. In this embodiment, the two electrodes of each light-emitting diode LED of the optoelectronic circuit 42 are connected to the control circuit 20 of the display pixel Pix. The control circuit 20 is connected between the electrode layers 18 and 34 and receives the voltage Vg. The circuit 20 controls the light-emitting diodes LED of the optoelectronic circuit 26.
In the present embodiment, the conductive layer 18 is in contact with all the display pixels Pix of the optoelectronic device 10, 40 and the conductive layer 34 is in contact with all the display pixels Pix of the optoelectronic device 10, 40 .
One embodiment of a method for manufacturing the optoelectronic device 10 or 40 comprises the production of display pixels Pix and the placing of each display pixel Pix separately on the electrode layer 18. According to one mode of embodiment, the electrode layers 18 and 34 being common to all the pixels of display Pix, the connection of the pixels of display Pix is simplified and it is not necessary that the placement of each pixel of display Pix on the electrode layer 18 is produced with high precision. This advantageously makes it possible to implement faster and lower cost techniques for arranging the display pixels Pix on the electrode layer 18. In addition, since the light-emitting diodes are assembled beforehand on the electronic circuit 20 of the display pixel Pix, the number of transfers
B16175 - Smart reporting to be carried out when mounting the optoelectronic device 10 or 40 is reduced. In the present embodiment, each display pixel Pix can comprise a memory in which is stored an identifier of the pixel. The manufacturing process may include a calibration phase in which the position of each display pixel Pix is retrieved according to its identifier. In operation, data can then be transmitted to the pixels according to their identifier.
FIG. 6 represents a schematic top view of the optoelectronic device 10 or 40 illustrating the fact that the display pixels Pix may not be arranged very precisely, for example perfectly aligned in rows and columns, and that certain pixels d Pix display can be tilted relative to the directions of the rows and columns.
In the embodiments described above, the electrode layer 18 is connected to all the display pixels Pix and is in the form of an uninterrupted layer extending over most, if not all, of the support 12.
For each display pixel Pix, the control circuit 20 is adapted to receive control signals and to control, from the received control signals, the light-emitting diodes of the display pixel, in particular the hue, the saturation and the brightness of the light emitted by the display pixel.
According to one embodiment, the control signals can be transmitted to the control circuits 20 of the display pixels Pix by modulating the voltage Vg.
FIG. 7 very schematically represents a processing module 49 receiving COM control signals and adapted to supply the optoelectronic device 10 or 40 with a supply voltage Vg of the display pixels Pix which is modulated with the COM control signals . The processing module 49 may correspond to a dedicated circuit or may include a processor, for example a microprocessor or a microcontroller,
B16175 - Smart reporting suitable for executing instructions from a computer program stored in a memory.
The control circuit 20 of each display pixel Pix can extract the control signals COM by demodulating the voltage Vg. The control circuit 20 can then determine whether the control signals COM are intended for it. By way of example, an identifier can be associated with each display pixel Pix and the control signals COM obtained by demodulating the voltage Vg can include the identifier of the display pixel for which these control signals are intended.
Advantageously, active addressing of the display pixels Pix can be achieved. Indeed, each control circuit 20 can control the maintenance of the display properties, in particular the hue, the saturation and the brightness, of the display pixel until it receives new control signals.
FIG. 8A represents a schematic top view of another embodiment of an optoelectronic device 50 comprising all the elements of the optoelectronic device 10 or 40 in which the electrode layer 18 is divided into electrically conductive strips 52 parallel extending on the support 12, three strips 52 being shown by way of example in FIG. 8. At least one row of display pixels Pix is distributed over each conductive strip. Preferably, several rows of Pix display pixels are distributed over each conductive strip 52, three rows of Pix display pixels being represented by conductive strip 52 by way of example in FIG. 8.
According to another embodiment, the electrode layer 18 and / or the electrode layer 34 can be divided into separate electrode portions. According to another embodiment, the electrode layer 34 can also be divided into parallel and electrically conductive strips. When the electrode layers 18 and 34 are each divided into strips, the strips of the electrode layer 18 preferably have substantially
B16175 - Smart reporting the same dimensions as the strips of the electrode layer 34 and each strip of the electrode layer 34 substantially covers only one of the strips of the electrode layer 18. According to another embodiment, the one of the electrodes 18 or 34 may be common to the display pixels Pix while the other electrode 18 or 34 is divided into parallel and electrically conductive strips. In the embodiment in which the electrode layers 18, 34 are divided into overlapping strips sandwiching sets of display pixels, different control signals can be transmitted in parallel by differently modulating the voltage Vg for each set of display pixels. This allows the control signals for each set of display pixels Pix to be transmitted in parallel. This makes it possible to reduce the frequency of modulation of the electromagnetic radiation and / or to increase the bit rate of transmitted data.
FIG. 8B is a partial and schematic top view of another embodiment of an optoelectronic device 55 in which the electrode layer 18 is divided into conductive strips 56 extending in the direction of the rows and in which the electrode layer 34 is divided into conductive strips 58 extending in the direction of the columns, and called column electrodes. At least one Pixel display pixel is disposed at the intersection, in top view, between each row electrode 56 and each column electrode 58 and is connected to the row electrode 56 and to the column electrode 58 For example, in FIG. 8B, three display pixels Pix are provided at the intersection, in top view, between each row electrode 56 and each column electrode 58 and form a pixel of the image to be pin up. When several Pix display pixels are provided for each pixel of the image to be displayed, this makes it possible to have redundancy in the event that one of the Pix display pixels is defective.
Figure 9 is a view similar to Figure 1 of another embodiment of an optoelectronic device 60
B16175 - Smart reporting comprising all of the elements of the optoelectronic device 10 and further comprising a stack of a first layer 62 and a second layer 64 covering the electrode layer 34. The layer 62 is composed of a material whose refractive index is greater than the refractive index of the material making up the layer 64. The layers 62 and 64 are at least partially transparent to the radiation emitted by the display pixels Pix. Layer 64 is for example made of glass, SiOg, AlgOg, HfOg, an organic material, for example a polymer, in particular poly (methyl methacrylate) (PMMA). The layer 62 corresponds for example to an air film. The layer 64 forms a waveguide for electromagnetic radiation 66, for example in the visible range or outside the visible range, preferably in a wavelength range between the infrared and ultraviolet range. The optoelectronic device 60 comprises an optoelectronic circuit 68 adapted to emit such radiation 66 in the layer 64. The optoelectronic circuit 68 can be located at the periphery of the layer 64 and emit the radiation 66 in the layer 64 from the lateral edge thereof. . The infrared radiation is modulated to transport the control signals described above. According to one embodiment, an optical coupling means 70 is provided between each display pixel Pix and the waveguide 64 so that a fraction 72 of the radiation 66 guided in the waveguide 64 escapes at each display pixel Pix via the coupling means 70. By way of example, the coupling means 70 corresponds to a texturing provided on the layer 64 and / or on the layer 62 opposite each Pix display pixel to ensure the optical coupling between each Pix display pixel and the layer 64. The coupling means 70 corresponds, for example, to a diffraction grating making it possible to return part of the electromagnetic radiation propagating in the waveguide 64 to the associated Pix display pixel.
Each display pixel Pix includes at least one sensor 74 adapted to detect the radiation emitted by the circuit
B16175 - Smart optoelectronic reporting 68, for example a photodiode or a photoresistor, the sensor supplying to the control circuit 20 an electrical signal representative for example of the intensity of the radiation 72 received by the display pixel Pix. The control circuit 20 is connected to the sensor and is adapted to extract the control signals from the measurement signal supplied by the sensor.
According to one embodiment, the same electromagnetic radiation transporting the control signals is transmitted to all the display pixels Pix. According to another embodiment, several waveguides can be provided, each waveguide being associated with a set of display pixels. According to another embodiment, optical break zones can be produced in the waveguide in order to be able to address different groups of pixels
FIG. 10 is a partial and schematic top view of another embodiment of an optoelectronic device 80 comprising disjoint waveguides 82, or a single waveguide having optical discontinuities, each covering a set of display pixels, not shown. The optoelectronic device 80 further comprises optoelectronic circuits 84 each adapted to emit in the associated waveguide 82 electromagnetic radiation in the non-visible range. This allows the control signals for each set of display pixels Pix to be transmitted in parallel. This makes it possible to reduce the frequency of modulation of the electromagnetic radiation and / or to increase the bit rate of transmitted data.
FIG. 11 is a partial and schematic top view of another embodiment of an optoelectronic device 90 comprising all of the elements of the device 80, each disjoint waveguide 82 covering at least one row of pixels of display.
In the present embodiment, the electrode layer 34 or the electrode layer 18 is divided into strips
B16175 - Smart conductive reporting 92 extending in the direction of the columns. Each conductive strip 92 is connected to the display pixels of at least one column of pixels.
An embodiment of a method for controlling the display pixels comprises a phase of selecting a display pixel or a group of display pixels via the electrodes 18, 92 followed by a data transmission phase to some of the display pixels selected by one of the waveguides 82. The selection phase can be carried out by bringing the conductive strip 92 connected to the display pixels to be selected to a first potential while that the other conductive strips 92 are maintained at a second potential different from the first potential. Only the display pixels which are selected are active and are suitable for processing data transmitted by electromagnetic radiation. The other display pixels are inactive and ignore the data that is transmitted by the radiation. The radiation transporting the data is then emitted in the waveguide 82 which covers the display pixels of interest. Only the display pixels which have been selected and which are covered by the waveguide 82 will process the data obtained by the detection of the radiation transmitted by the waveguide 82.
According to one embodiment, each conductive strip 92 is connected to the display pixels of a single column of display pixels and each waveguide 82 covers only one row of display pixels. The control method described above then makes it possible to select and transmit data only to a single display pixel.
FIG. 12 is a partial and schematic top view of another embodiment of an optoelectronic device 100 in which the electrode layer 18 is divided into conductive strips 102 extending in the direction of the rows, and called electrodes row, each conductive strip 102 being connected to the display pixels Pix of a row of pixels and in which the electrode layer 34 is
B16175 - Smart reporting divided into conductive strips 104 extending along the direction of the columns, and called column electrodes, each conductive strip 104 being connected to the display pixels Pix of a column of pixels.
As shown in FIG. 12, the width of each conductive strip 102 is greater than the dimension of the display pixel Pix measured in the direction of the columns and the width of each conductive strip 104 is greater than the dimension of the display pixel Pix measured according to the direction of the rows. Therefore, for each row, the display pixels Pix belonging to the row may not be perfectly aligned. Likewise, for each column, the display pixels Pix belonging to the column may not be perfectly aligned.
An embodiment of a method for controlling a display pixel Pix comprises a phase for selecting the display pixel followed by a phase for transmitting data to the display pixel Pix.
FIG. 13 is a timing diagram of the potentials Vpix + and Vpix- respectively applied respectively to the column and row electrodes connected to a display pixel to be controlled and FIG. 14 is a timing diagram of the voltage sig seen between the supply terminals of the display pixel to order.
According to one embodiment, the optoelectronic circuit 100 is adapted to vary the potential of each row electrode between two values V0 and VI, VI being strictly greater than V0, and to vary the potential of each column electrode between two values V2 and V3, V3 being strictly greater than V2 and V2 being strictly greater than VI. The difference between V3 and V2 can be equal to the difference between VI and V0.
According to one embodiment, the control method comprises a phase S1 for selecting a display pixel to be controlled followed by a phase S2 for transmitting data to the selected display pixel.
B16175 - Smart reporting
Phase S1 consists in bringing the row electrode connected to the display pixel to be controlled to V0, the other row electrodes being left at VI and in bringing the column electrode connected to the display pixel to be controlled to V3, the other row electrodes being left at V2. The display pixel to be controlled then sees a voltage equal to V3-V0, while the other display pixels of the same row see a voltage equal to V2-V0, that the other display pixels of the same column see a voltage equal to V3-V1 and that the other display pixels of the other rows and columns see a voltage equal to V2-V1. All display pixels other than the display pixel to be controlled have a voltage lower than V3V0.
Phase S2 consists in varying the potential of the column electrode of the display pixel to be controlled between V2 and V3 while leaving the row electrode of the display pixel to be controlled at VI. Therefore, the voltage seen by the display pixel to be controlled varies like the potential of the column electrode.
Each display pixel is adapted to detect if, in phase S1, the supply voltage applied to it is greater than a threshold. When a display pixel detects that, in phase S1, the supply voltage which is applied to it is greater than the threshold, it is suitable for processing the data which is then transmitted during phase S2. When a display pixel detects that, in phase S1, the supply voltage which is applied to it is below the threshold, it does not process the data which is then transmitted to it during phase S2.
The present embodiment makes it possible to select a display pixel while maintaining the power supply for the other display pixels. The present embodiment further makes it possible to transmit data to a single display pixel of an array of display pixels. Advantageously, all the display pixels of the matrix can correspond to identical optoelectronic devices. This allows
B16175 - Smart reporting simplify the design of display pixels and the mounting of display pixels. The present embodiment also makes it possible to transmit data simultaneously to several display pixels, or even to transmit data simultaneously to all the display pixels. In addition, the fact that the potential of one of the electrodes remains constant during phase S2 advantageously allows the display pixel to have a constant potential reference during phase S2, which simplifies the processing of the signals by the pixel d display.
The data transmitted during phase S2 can be binary data and / or analog data. The transmitted data can be modulated. It can be a frequency, amplitude, phase modulation, or pulse width modulation.
By way of example, in FIGS. 13 and 14, phase S2 successively comprises a sub-phase Scom corresponding to the transmission of binary data, a phase SR corresponding to the transmission of a command for a first sub-pixel of display, for example the red display sub-pixel, a phase SG corresponding to the transmission of a command for a second display sub-pixel, for example the green display sub-pixel and a phase SB corresponding to the transmission of a command for a third display sub-pixel, for example the blue display sub-pixel. As a variant, the Scom sub-phase may not be present.
According to one embodiment, each sub-phase SR, SG and SB comprises the transmission of a voltage pulse whose duration is representative of the desired duration of activation of the display sub-pixel considered.
FIG. 15 represents an equivalent electrical diagram of an embodiment of the display pixel Pix.
The display pixel Pix is connected to one of the column electrodes 104 which is at the potential Vpix + and to one of the row electrodes 102 which is at the potential Vpix-.
B16175 - Smart reporting
The display pixel Pix comprises a processing module CM (Signal Processor), a module CR for controlling a first display sub-pixel (Red Pixel), for example of the red display subpixel, a module CG control of a second display sub-pixel (Green Pixel), for example of the green display sub-pixel, and a CB module for control of a third display sub-pixel (Blue Pixel), for example of the sub - blue display pixel. The electronic components of the processing module CM are located at the level of the control circuit 20. The electronic components of the modules CR, CG, CB can be located at the level of the control circuit 20 and / or at the level of the optoelectronic circuits 26.
Each module CM, CR, CG and CB is connected to the column and row electrodes 102, 104 associated with the potentials Vpix + and Vpix- for their electrical supply. The control circuit CM receives the potential values Vpix + and Vpix- and an end signal as input signals and supplies three binary data, write and clear signals. According to one embodiment, the modules CR, CG and CB are identical and each module CR, CG and CB comprises three write capacitor, write enable and clear pixel inputs and a write done output. As a variant, the module CB can be different from the modules CR and CG and not include a write done output. The write capacitor inputs of each CR, CG and CB module each receive the data signal. The clear pixel inputs of each CR, CG and CB module each receive the clear signal. The write enable input of the CR module receives the write signal. The write enable input of the CG module is connected to the write done output of the CR module and the write enable input of the CB module is linked to the write done output of the CG module. In the embodiment illustrated in FIG. 15, the write done output of the module CB provides the end signal received by the module CM.
FIG. 16 represents an equivalent electrical diagram of an embodiment of the module CR, the modules CG and CB possibly being identical.
B16175 - Smart reporting
According to one embodiment, the CR module comprises a light-emitting diode LED whose anode is connected to the electrode at potential Vpix + and whose cathode is connected to a control terminal among the drain or the source of a MOS transistor Tl and the other control terminal of which is connected to the electrode at potential Vpix-. The module CR further comprises a capacitor C1, one electrode of which is connected to the gate of the transistor T1 and the other of which is connected to the electrode of the potential Vpix-. The module CR further comprises a MOS transistor T2, one control terminal of which is among the drain or the source is connected to the gate of the transistor T1 and the other control terminal of which is connected to the electrode at potential Vpix-. The gate of transistor T2 is connected to the clear pixel input. The CR module also includes an AND logic gate with three AND1 inputs, two of which correspond to the write enable and write capacitor inputs of the CR module. The logic gate AND1 supplies an enable control signal to a current source CS, one terminal of which is connected to the electrode at potential Vpix + and the other terminal of which is connected to the gate of the transistor Tl. The module CR further comprises , an RS RS1 flip-flop whose input S, sensitive to falling edges, receives the enable signal, whose input R is connected to the clear pixel input of the module CR and whose output Q is connected to the third input of the AND1 logic gate. The Q output of the RS1 flip-flop is connected to the write done output of the CR module.
FIG. 17 represents a timing diagram of signals during a cycle of control of the display pixel of FIG. 15. One calls t0, tl, t2, t3, t4, t5, t6 and t7 successive instants. The write enable output of the CR module provides the Red Done signal. The write enable output of the CG module provides the Green Done signal. The write enable output of the CB module provides the Blue Done signal.
The Red Cap, Green Cap and Blue Cap signals correspond respectively to the voltages at the terminals of the capacitors Cl respectively of the modules CR, CG and CB. The signal sig corresponds to the difference between the potentials Vpix + and Vpix-. The sig signal can take three discrete values 0, 1 and 2.
B16175 - Smart reporting
In the present embodiment, the data signal is equal to the signal sig outside of the selection phase and the write signal is set to 1 during the control phases of the display sub-pixels.
At time t0, the signals Red Done, Green Done and Blue Done are at 1, the signal sig is at 0 and the signal clear is at 0. At time tl, the signal sig goes from 0 to 2. The CM module detects that the display pixel is selected and sets the clear signal to 1. At time t2, the sig signal goes to 0. The CM module then sets the write signal to 1 and the clear signal to 0. This initializes the flip-flops RS1 of the modules CR, CG and CB, sets the signals Red Done, Green Done and Blue Done to 0 and empties the capacitors Cl of the modules CR, CG and CB, putting the voltages Red Cap, Green Cap and Blue Cap at 0. At time t3, the control phase of the red display sub-pixel begins. In the present embodiment, the red display sub-pixel is activated and the sig signal goes to 1. The data signal is equal to the sig signal so that the capacitor Cl of the module CR is charged by the current source CS until time t4 at which the signals sig and data pass to 0. The Red Done signal then passes to 1. At time t5, the control phase of the green display sub-pixel begins. In the present embodiment, the green display sub-pixel is not activated and the sig signal goes to 1 for a very short time. The capacitor C1 of the module CG is then not substantially charged and the Green Done signal then passes to 1. At time t6, the control phase of the blue display sub-pixel begins. In the present embodiment, the blue display sub-pixel is activated and the sig signal goes to 1. The data signal is equal to the sig signal so that the capacitor Cl of the module CR is charged by the current source CS until time t7 at which the sig and data signals pass to 0. The Blue Done signal then passes to 1.
FIG. 18 represents an equivalent electrical diagram of another embodiment of the module CM suitable for the case where the end signal is supplied by the write output of the module CG, the modules
B16175 - Smart reporting
CR, CG corresponding for example to the electrical diagram shown in Figure 20 described below and the module CB corresponding for example to the electrical diagram shown in Figure 21 described below. In the present embodiment, during the transmission phase S2, the data signal is equal to the signal sig delayed by a given duration ΔΤ and the write signal is equal to the signal sig.
The CM module comprises a start detector block comprising an input s + connected to the electrode at potential Vpix + and an input s- connected to the electrode at potential Vpix- and providing a binary start signal. The start detector block is adapted to detect that the signal sig, which corresponds to the voltage between the inputs s + and s-, goes to 2 and is adapted to set the start signal to 1 when the signal sig returns to 0.
The CM module includes a data extactor block comprising an input s + connected to the electrode at potential Vpix +, an input s- connected to the electrode at potential Vpix- and an enable input receiving the start signal. The block provides the clear signal and the raw_data signal which is extracted from the sig signal, and which corresponds for example to a binary version of the sig signal outside the selection phase.
The CM module includes a zero detector block receiving the raw_data signal and supplying the write signal equal to the raw_data signal and supplying the data signal which is equal to the raw_data signal whose duration of each pulse to 1 is reduced by the duration ΔΤ, the start of each pulse being delayed by the duration ΔΤ and the end of each pulse not being modified so that if the pulse of the raw_data signal is less than the duration ΔΤ, the data signal does not include a corresponding pulse.
FIG. 19 represents an electrical diagram of a more detailed embodiment of the CM module shown in FIG.
18.
The CM module includes a first voltage divider bridge comprising two resistors RI and R2 connected in series
B16175 - Smart reporting between the electrode at potential Vpix + and the electrode at potential Vpix-. The midpoint of the first divider bridge supplies a succession of two inverters INV1 and INV2 in series, the second inverter INV2 supplying the start signal. The CM module includes a RS RS2 flip-flop whose input S receives the start signal and whose input R, sensitive to falling edges, receives an end signal. The end signal is provided by the write done output of the CG module as described in Figure 20. The CM module includes a NOR OR NOR1 gate, the first input of which receives the start signal, the second input of which is connected to the Q output of the RS2 flip-flop and which supplies the enable signal.
The module CM includes a second voltage divider bridge comprising two resistors R3 and R4 connected in series between the electrode at potential Vpix + and the electrode at potential Vpix-. The CM module includes three MOS transistors T3, T4 and T5 in series between the electrode at potential Vpix + and the electrode at potential Vpix-. The transistor T3 is on the P channel and the transistors T4 and T5 are on the N channel. The gates of the transistors T3 and T4 receive the enable signal. The midpoint of the second divider bridge feeds the gate of transistor T5.
The source of transistor T3 supplies an inverter INV3 which supplies the write signal. The CM module includes an AND AND2 logic gate with two inputs, the first input of which receives the write signal. The module CM includes a resistor R5 mounted between the output of the inverter INV3 and the second input the gate AND2. The module CM comprises a capacitor C2, one electrode of which is connected to the second input of the gate AND2 and the other electrode of which is connected to the electrode at potential Vpix-. The output of the AND2 gate provides the data signal.
FIG. 20 represents an equivalent electrical diagram of another embodiment of the module CR, the module CG possibly being identical. The CR module comprises all the elements of the module represented in FIG. 16 with the difference that the input S of the flip-flop RS1 is connected to the write enable input of the module CR and in that it comprises a logic gate AND to two AND3 inputs including
B16175 - Smart reporting the first input receives the signal Q, the second input of which is connected to the write enable input and the output of which is connected to the write done output.
FIG. 21 represents an equivalent electrical diagram of another embodiment of the module CB. The module CB includes all the elements of the module represented in FIG. 16 with the difference that the flip-flop RS1 is not present and that the logic gate AND1 with three inputs is replaced by a logic gate AND4 with two inputs of which the first input is connected to the write capacitor input of the CB module and the second input of which is connected to the write enable input of the CB module and providing the enable signal.
FIG. 22 represents a timing diagram of signals during a cycle of control of the display pixel of FIG. 18. We call t'0, t'I, t'2, t'3, t'4, t'5 , t'6, t'7, t'8 and t'9 successive instants. The Red write enable, Green write enable and Blue write enable signals correspond to the signals received respectively by the write enable inputs of the CR, CG and CB modules.
The signals evolve at times t'0, t'I, t'2 in the same way as what has been described previously for the signals t0, tl and t2. At time t'3, the control phase of the red display sub-pixel begins. In the present embodiment, the red display sub-pixel is activated and the signal sig goes to 1. The data signal is equal to the signal sig delayed by a duration ΔΤ so that the capacitor Cl of the module CR is charged by the current source CS from the instant t'4 to the instant t'5 at which the signals sig, data and Red write enable pass to 0. The write done signal of the module CR then becomes equal to the signal Red write enable. At time t'6, the control phase of the green display sub-pixel begins. In the present embodiment, the green display sub-pixel is not activated and the signal sig goes to 1 for a duration less than ΔΤ. The write signal and Green write enable also go to 1 during this very short time. However, the data signal remains at 0 so
B16175 - Smart reporting that the capacitor C of the CG module is not charged. The write done signal from the CR module then becomes equal to the Green write enable signal. At time t'7, the control phase of the blue display sub-pixel begins. In the present embodiment, the blue display sub-pixel is activated and the signal sig goes to 1. The data signal is equal to the signal sig delayed by a duration ΔΤ so that the capacitor C of the module CB is charged by the current source CS from the instant t'8 to the instant t'9 at which the signals sig, data, Red write enable, Green write enable and Blue write enable pass to 0.
According to one embodiment, the display pixel can be produced with less than 150 MOS transistors, 5 resistors and 4 capacitors. It can thus occupy a reduced surface.
FIG. 23 represents an electrical diagram of another embodiment of the display pixel Pix.
The display pixel Pix is connected to one of the column electrodes 102 which is at the potential Vpix + and to one of the row electrodes 104 which is at the potential Vpix-.
The Pix display pixel includes a Ml level detection module, a M2 module for rising edge detection (Rise Front detector) and an M3 counter (Ring Counter) and the CR, CG and CB modules for controlling the display sub-pixels. The electronic components of the modules M1, M2 and M3 are located at the level of the control circuit 20. The electronic components of the modules CR, CG, CB can be located at the level of the control circuit 20 and / or at the level of the optoelectronic circuits 26.
Each module M1, M2, M3, CR, CG and CB is connected to the associated column and row electrodes 102, 104 at the potentials Vpix + and Vpix- for their electrical supply.
The module M1 receives the potential values Vpix + and Vpix- as input signals respectively at inputs V + and Vet a binary signal Reset and provides a binary signal Detect enable and a binary signal Clear. The M2 module receives the potential values Vpix + and Vpix- as input signals respectively
B16175 - Smart reporting
35 Has Entrance V + and V-and the signal binary Detect enable at a Entrance Enable and provides a signal binary Clock. The module M3 receives the signal binary Clock and provides three binary signals
bO, bl and b2. The falling edge of b2 resets the module M1.
Each CR, CG and CB module includes a Cap reset input and a Prog input. The Cap reset input of each CR, CG and CB module receives the Detect enable signal. The input Prog of the module CR receives the signal b0, the input Prog of the module CG receives the signal b1 and the input Prog of the module CB receives the signal b2.
In the present embodiment, the module M1 is adapted to detect that the display pixel is selected by an increase in the signal sig. When a selection has been detected, the M2 module detects the rising edges of the sig signal. The capacitors of modules CR, CG and CB are charged sequentially, the transition from one module to another being triggered by a falling edge of the signal sig. At the start of each sequence, the capacitors of the CR, CG and CB modules are discharged.
FIG. 24 represents an embodiment of the module M3. The module M3 comprises a succession of four flip-flops of the D type with asynchronous inputs / S and / R Dl, D2, D3 and D4. The input ck of each flip-flop Dl, D2 and D3 receives the Clock signal. The Q output of the Dl flip-flop is connected to the D input of the D2 flip-flop, the Q output of the D2 flip-flop is connected to the D input of the D3 flip-flop and the Q output of the D3 flip-flop is connected to the input D of flip-flop D4. The output of the flip-flop Dl is at 1 at the initialization of the counter, while the outputs of the other flip-flops are in logic state 0. The bit bO corresponds to the signal supplied by the output Q of the flip-flop D2, the bit bl corresponds to the signal supplied by the Q output of flip-flop D3 and bit b2 corresponds to the signal supplied by the Q output of flip-flop D4. The Clear signal from the module Ml is supplied to the inverter INV9 and feeds the input / S of the flip-flop Dl as well as the inputs / R of the flip-flops D2, D3 and D4.
B16175 - Smart reporting
FIG. 25 represents an embodiment of the module CR. The CG and CB modules can have the same structure. The CR module has the same structure as the CR module shown in FIG. 16 with the difference that the logic gate AND1 and the flip-flop RS1 are not present, that the current source CS is controlled by the signal received at the input Prog of the module CR and that the gate of transistor T2 is controlled by the signal received at the input Cap_reset of the module CR.
FIG. 26 represents a timing diagram of signals during a control cycle of the display pixel of FIG. 23. We call t0, tl, t2, t3, t4, t5, t6, t7, t8, t9, t10, tll and t12 successive instants.
At time t0, the signals sig, Cap_reset, detect enable, up, bO, bl and b2 are at 0. At time tl, the signal sig goes from 0 to 2. The module Ml detects that the pixel of display is selected and sets the Clear signal and the detect enable signal to 1. At time t2, the signal sig goes to 1 and the module Ml passes the Clear signal to 0. At time t3, the control phase SR of the red display sub-pixel begins. In the present embodiment, the red display sub-pixel is activated and the signal sig changes to 2. The clock signal is set to 1 from time t3 to time t4. The signal b0 is set to 1 at time t3. At time t5, the signal sig goes to 1. At time t6, the signal sig goes to 2, the phase SG for controlling the green display sub-pixel begins while the phase for controlling the sub-pixel red is over. In the present embodiment, the green display sub-pixel is activated. The clock signal is set to 1 from time t6 to time t7. The signal bl is set to 1 at time t6. The signal b0 is set to 0 at time t6. At time t8, the signal sig goes to 2, the phase SB for controlling the blue display sub-pixel begins. In the present embodiment, the blue display sub-pixel is activated. The clock signal is set to 1 from time t8 to time t9. Signal b2 is set to 1 at time t8. The signal bl is set to 0 at time t8. AT
B16175 - Smart reporting at time t10, the signal sig goes to 1. At time tll, the signal sig is set to 2. The end of the transaction is signaled. At time t11, the clock signal is set to 1 and the signal b2 is set to 0, the control phase SB of the blue sub-pixel ends. At time t12, the signal sig goes to 1 then to 0.
According to one embodiment, the display pixel can be produced with less than 150 MOS transistors, 3 resistors and 4 capacitors. It can thus occupy a reduced surface.
In order to optimize the conditions for data transfer, all of the embodiments could incorporate a function for turning off the pixels of the row or of the column addressed for the duration of the communication, which will limit the load to be controlled during the transfer of the data. Adding such functionality could be done by reducing the potential difference Vpix + - Vpix-.
FIGS. 27A to 27H are partial and schematic sectional views of structures obtained in successive stages of an embodiment of a method for manufacturing the optoelectronic device 10 represented in FIGS. 1 and 2.
FIG. 27A represents the structure obtained after the manufacture of an electronic circuit 110 comprising several copies of the desired control circuit 20, four copies of the control circuit 20 being shown by way of example in FIG. 27A. The method of manufacturing the electronic circuit 110 may include conventional steps of a method of manufacturing an integrated circuit.
FIG. 27B represents the structure obtained after having fixed the optoelectronic circuits 26 on the electronic circuit 110. The methods of assembling the optoelectronic circuits 26 on the electronic circuit 110 may include soldering operations.
FIG. 27C represents the structure obtained after the deposition of an electrically insulating layer 112 covering the optoelectronic circuits 26 and the electronic circuit 110 between the optoelectronic circuits 26. The insulating layer 112 is of the
B16175 - Smart reporting same material as the insulating portions 28 described above. The insulating layer 112 can be SiOg, SiN, AlgOg, ZrOg, HfOg or any other dielectric material deposited by chemical vapor deposition (CVD), chemical vapor deposition assisted by plasma (PECVD, acronym for Plasma Enhanced Chemical Vapor Deposition), atomic thin film deposition (ALD) or sputtering.
FIG. 27D represents the structure obtained after the formation of the conducting elements 30 in the insulating layer 112. The conducting elements 30 can be formed by etching openings in the insulating layer 112 stopping on the optoelectronic circuits 26 and / or the circuits of control 20, by depositing a conductive layer on the whole of the structure obtained and by removing the part of the conductive layer outside the openings.
FIG. 27E represents the structure obtained after cutting the electronic circuit 110 and the insulating layer 112 to delimit the display pixels Pix.
FIG. 27F represents the structure obtained after having fixed the Pix display pixels to the electrode layer 18 which has been previously deposited on the support 12. As an example, each Pix display pixel can be fixed to the electrode layer 18 by molecular bonding or by means of a bonding material, in particular an electrically conductive epoxy adhesive.
FIG. 27G represents the structure obtained after having formed the insulating layer 32 on the display pixels Pix and on the electrode layer 18 between the display pixels Pix. The insulating layer 32 can be SiOg, SiN, AlgOg, ZrOg, HfOg or any other dielectric material.
FIG. 27H represents the structure obtained after the removal of the insulating layer 32 at the top of each display pixel Pix. According to one embodiment, the removal can be carried out by chemical mechanical polishing or CMP (English acronym
B16175 - Smart reporting for Chemical Mechanical Planarization) with stop on the insulating portions 28. According to another embodiment, this can be obtained by chemical etching of the insulating layer 32. According to another embodiment, the removal can be carried out by a so-called lift-off process comprising the deposition of a sacrificial layer at the top of each display pixel Pix before the deposition of the insulating layer 32, and, after the deposition of the insulating layer 32, the removal of the sacrificial layer and of the part of the insulating layer 32 covering the sacrificial layer.
FIG. 271 represents the structure obtained after the formation of the electrode layer 34. The electrode layer 34 can be TCO (English acronym for Transparent Conductive Oxide) deposited by CVD, PECVD, ALD, sputtering or evaporation.
FIGS. 28A to 28D are partial and schematic sectional views of structures obtained at successive stages of an embodiment of a method for manufacturing the optoelectronic device shown in FIG. 4B.
FIG. 28A represents the structure obtained after the formation of an optoelectronic circuit 90 comprising several copies of the optoelectronic circuit 42, three copies of the optoelectronic circuit 42 being shown by way of example in FIG. 27A. By way of example, in FIG. 28A, each optoelectronic circuit 42 is shown comprising two optoelectronic circuits 26 separated by the portion 47.
FIG. 28B represents the structure obtained after the formation of the TSV 48 passing through the optoelectronic circuits 64. Each TSV 48 can be formed by etching an opening crossing the optoelectronic circuit 90. This opening can have a circular or rectangular cross section. The etching can be a deep reactive ion etching (DRIE, English acronym for Deep Reactive Ion Etching). An insulating layer is then deposited on the walls of the opening. The insulating layer is, for example, produced by conformal deposition by PECVD or by conformal deposition of an insulating polymer. The insulating layer has a
B16175 - Smart reporting thickness between 10 nm and 5000 nm, for example around 3 pm. The filling of the TSV can then be carried out by electrolytic deposition of copper.
FIG. 28C represents the structure obtained after the deposition of an insulating layer 92 on the optoelectronic circuit 90. The insulating layer 92 is of the same material as the insulating portions 28 described above. The insulating layer 92 can be deposited by CVD, PECVD, ALD or sputtering.
FIG. 28D represents the structure obtained after the formation of the conductive elements 30 in the insulating layer 92.
The subsequent steps of the method can be the same as those described above in relation to FIGS. 27E to 271.
Various embodiments with various variants have been described above. Note that those skilled in the art can combine various elements of these various embodiments and variants without showing inventive step. For example, the electrical diagram shown in Figure 3 can be implemented with the structure of the device 40 shown in Figure 4B and the electrical diagram shown in Figure 5 can be implemented with the structure of the device 1040 shown in Figures 1 and 2.

权利要求:
Claims (16)
[1" id="c-fr-0001]
1. Optoelectronic device (10; 40; 50; 60; 70) comprising:
a support (12);
at least a first electrically conductive layer (18) covering the support;
display pixel circuits (Pix) comprising first and second opposite faces (22, 23), fixed to the first electrically conductive layer, each display pixel circuit comprising an electronic circuit (20) comprising the first face and a third face (24) opposite the first face, the first face being fixed to the first electrically conductive layer, and at least one optoelectronic circuit (26; 42) fixed to the third face and comprising at least one light-emitting diode (LED) , at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third face;
at least one second electrically conductive layer (34) covering the display pixel circuits and electrically connected to the electronic circuits of the display pixel circuits on the side of the second face.
[2" id="c-fr-0002]
2. Optoelectronic device according to claim
1, further comprising an electrically insulating layer (32) covering the first electrically conductive layer (18) between the display pixel circuits (Pix).
[3" id="c-fr-0003]
3. Optoelectronic device according to claim
2, wherein the electrically insulating layer (32) covers the lateral flanks of the display pixel circuits (Pix).
[4" id="c-fr-0004]
4. Optoelectronic device according to any one of claims 1 to 3, in which each display pixel circuit (Pix) further comprises an electrically insulating portion (28) covering the electronic circuit (20) and the optoelectronic circuit (26; 42) and at least one electrically conductive element (30) passing through the electrically insulating portion and electrically connected to the second layer
B16175 - Smart reporting electrically conductive (34) and to the optoelectronic circuit (26; 42) or to the electronic circuit (20).
[5" id="c-fr-0005]
5. Optoelectronic device according to claim
4, in which, for each display pixel circuit (Pix), the optoelectronic circuit (42) comprises a through connection (48) electrically isolated from the rest of the optoelectronic circuit and electrically connected to the electronic circuit (20) and to the conductive element (30).
[6" id="c-fr-0006]
6. Optoelectronic device according to any one of claims 1 to 5, comprising at least two first electrically conductive layers (52) disjoint and covering the support (12), sets of said display pixel circuits (Pix) fixed to each first electrically conductive layer and at least two second electrically conductive layers (34) each covering one of the sets of said display pixel circuits and each being electrically connected to the electronic circuits (20) of one of the sets of said pixel circuits display.
[7" id="c-fr-0007]
7. Optoelectronic device according to any one of claims 1 to 5, comprising a module (49) for supplying, between the first electrically conductive layer (18) and the second electrically conductive layer (34), a voltage (Vg) modulated by control signals (COM), the electronic circuit (20) of each display pixel circuit (Pix) being adapted to demodulate said voltage to extract the control signals.
[8" id="c-fr-0008]
8. Optoelectronic device according to claim 7, in which each electronic circuit (20) comprises a memory in which an identifier is stored, the identifiers stored in the electronic circuits being different, and in which each electronic circuit (20) comprises adapted circuits extracting from the modulated voltage (Vg) information representative of one of the identifiers.
[9" id="c-fr-0009]
9. Optoelectronic device according to any one of claims 1 to 6, comprising at least one waveguide
B16175 - Smart reporting (64), possibly integrated into the second electrically conductive layer (34), coupled to the optoelectronic circuits (26; 42) of the display pixel circuits (Pix) and suitable for guiding electromagnetic radiation.
[10" id="c-fr-0010]
10. Optoelectronic device according to claim
9, in which the device further comprising a source (68) of said electromagnetic radiation coupled with the waveguide and in which, for each display pixel circuit (Pix), the optoelectronic circuit (26; 42) comprises a sensor of said electromagnetic radiation adapted to supply a measurement signal to the electronic circuit (20).
[11" id="c-fr-0011]
11. Optoelectronic device according to claim
10, in which the source (68) is adapted to modulate the electromagnetic radiation by control signals (COM), and in which, for each display pixel circuit (Pix), the electronic circuit (20) is adapted to demodulating the measurement signal to extract the control signals.
[12" id="c-fr-0012]
12. Optoelectronic device according to any one of claims 9 to 11, comprising at least two waveguides, possibly integrated into the second electrically conductive layer (34) coupled to the optoelectronic circuits (26; 42) of sets distinct from said circuits display pixel (Pix) ·
[13" id="c-fr-0013]
13. Optoelectronic device according to any one of claims 9 to 12, further comprising optical coupling means (70) between the waveguide (64) and at least some of the display pixel circuits (Pix).
[14" id="c-fr-0014]
14. Method for manufacturing an optoelectronic device (10; 40; 50; 60; 70) comprising the following steps:
a) fabricating display pixel circuits (Pix) comprising first and second opposite faces (22, 23) and each comprising an electronic circuit (20) comprising first faces and a third face (24) opposite the first face, and at least one optoelectronic circuit (26; 42) fixed to the
B16175 - Third-side smart reporting and comprising at least one light-emitting diode (LED), at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third face;
b) fabricating a support (12) covered with at least one first electrically conductive layer (18);
c) fixing the first face of the electronic circuit (20) of each display pixel circuit to the first electrically conductive layer;
d) forming at least one second electrically conductive layer (34) covering the display pixel circuits and electrically connected to the optoelectronic circuits of the display pixel circuits on the side of the second face.
[15" id="c-fr-0015]
15. The method of claim 14, comprising, between steps c) and d), the step of forming an electrically insulating layer (32) covering the first electrically conductive layer (18) between the display pixel circuits (Pix).
[16" id="c-fr-0016]
16. The method as claimed in claim 14 or 15, in which step a) comprises the formation, for each display pixel circuit (Pix), of an electrically insulating portion (18) covering the electronic circuit (20) and the optoelectronic circuit (26; 42) and at least one electrically conducting element (30) passing through the electrically insulating portion and electrically connected to the second electrically conducting layer (34) and to the optoelectronic circuit (26; 42) or to the electronic circuit (20).

类似技术:

---

公开号 | 公开日 | 专利标题

---

FR3069378B1|2019-08-23|OPTOELECTRONIC DEVICE

---

EP1419533B1|2006-12-13|Active matrix of thin-film transistors | for an optical sensor or display screen

---

EP1543355B1|2007-07-25|Optical microsystem and method for making same

---

FR3069379B1|2019-08-23|OPTOELECTRONIC DEVICE

---

EP1421624B1|2006-10-11|Method for making a colour image sensor with recessed contact apertures prior to thinning

---

EP3428908B1|2021-11-17|Transparent active matrix display comprising colored led pixels

---

WO2020002815A1|2020-01-02|Optoelectronic device comprising light-emitting diodes

---

EP2677361B1|2015-08-05|Panel comprising an array of liquid crystal cells for use in a nano-projector

---

US10868203B1|2020-12-15|Film-based image sensor with planarized contacts

---

EP3614439A1|2020-02-26|Pixel of a micro-screen with organic light-emitting diodes

---

FR3104819A1|2021-06-18|LIGHT SOURCE WITH ELECTROLUMINESCENT SEMICONDUCTOR ELEMENTS

---

WO2020161400A1|2020-08-13|Electroluminescent display device

---

WO2020083638A1|2020-04-30|Electronic device

---

WO2020173758A1|2020-09-03|Image-sensor matrix-array device comprising thin-film transistors and organic photodiodes

---

WO2014111650A1|2014-07-24|System and method for detecting the position of an actuation member on a display screen

---

FR3090199A1|2020-06-19|Optoelectronic device for the acquisition of images from several points of view and / or the display of images from several points of view

---

FR3085763A1|2020-03-13|TRANSMISSION SCREEN WITH LIQUID CRYSTALS ON SILICON

---

WO2019239059A1|2019-12-19|Optoelectronic device

---

EP3679604A1|2020-07-15|Process for manufacturing an led-based emissive display device

同族专利:

---

公开号 | 公开日

---

US20200161520A1|2020-05-21|

---

TW201919201A|2019-05-16|

---

JP2020527756A|2020-09-10|

---

KR20200033882A|2020-03-30|

---

EP3655990A1|2020-05-27|

---

CN111108599A|2020-05-05|

---

FR3069378B1|2019-08-23|

---

WO2019016481A1|2019-01-24|

引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

US6061039A|1993-06-21|2000-05-09|Ryan; Paul|Globally-addressable matrix of electronic circuit elements|

---

US20110050658A1|2009-08-28|2011-03-03|White Christopher J|Chiplet display with optical control|

---

US20120256814A1|2011-04-08|2012-10-11|Sony Corporation|Pixel chip, display panel, lighting panel, display unit, and lighting unit|

---

FR2995729B1|2012-09-18|2016-01-01|Aledia|SEMICONDUCTOR MICROFILL OR NANOWILE OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME|

---

FR3011383B1|2013-09-30|2017-05-26|Commissariat Energie Atomique|METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES WITH ELECTROLUMINESCENT DIODES|JP2020155431A|2019-03-18|2020-09-24|ローム株式会社|Semiconductor light-emitting device|

---

FR3104795B1|2019-12-12|2022-01-28|Aledia|Device comprising a display screen with a low power operating mode|

---

US11094846B1|2020-08-31|2021-08-17|4233999 Canada Inc.|Monolithic nanocolumn structures|

法律状态:
2019-01-25| PLSC| Search report ready|Effective date: 20190125 |

---

2019-07-23| PLFP| Fee payment|Year of fee payment: 3 |

---

2020-07-28| PLFP| Fee payment|Year of fee payment: 4 |

---

2021-07-29| PLFP| Fee payment|Year of fee payment: 5 |

优先权:

---

申请号 | 申请日 | 专利标题

---

FR1756984A|FR3069378B1|2017-07-21|2017-07-21|OPTOELECTRONIC DEVICE|

---

FR1756984|2017-07-21|FR1756984A| FR3069378B1|2017-07-21|2017-07-21|OPTOELECTRONIC DEVICE|

---

TW107124757A| TW201919201A|2017-07-21|2018-07-18|Optoelectronic device|

---

CN201880061200.4A| CN111108599A|2017-07-21|2018-07-19|Optoelectronic device|

---

JP2020502940A| JP2020527756A|2017-07-21|2018-07-19|Optical electronic device|

---

US16/631,806| US20200161520A1|2017-07-21|2018-07-19|Optoelectronic device|

---

PCT/FR2018/051849| WO2019016481A1|2017-07-21|2018-07-19|Optoelectronic device|

---

KR1020207004028A| KR20200033882A|2017-07-21|2018-07-19|Optoelectronic device|

---

EP18762361.6A| EP3655990A1|2017-07-21|2018-07-19|Optoelectronic device|